irg5k50p5k50pm06e IRG7T150HF12J 1 www.irf.com ? 2014 international rectifier submit datasheet feedback september 2, 2014 applications ? industrial motor drive ? uninterruptible power supply ? welding and cutting machine ? switched mode power supply ? induction heating v ces = 1200v i c = 150a at t c = 80c t sc 10sec v ce(on) = 1.90v at i c = 150a absolute maximum ratings of igbt v ces collector to emitter voltage 1200 v v ges continuous gate to emitter voltage 20 v i c continuous collector current t c = 80c 150 a t c = 25c 300 a i cm pulse collector current t j = 175c 300 a p d maximum power dissipation (igbt) t c = 25c, t j = 175c 1000 w t j maximum igbt junction temperature 175 c t jop maximum operating junction temperature range - 40 to +150 c t stg - 40 to +125 c storage temperature features benefits low v ce(on) and switching losses high efficiency in a wide range of applications rbsoa tested rugged transient performance 10sec short circuit safe operating area pow ir eco 3+ ? package industry standard lead free rohs compliant, environmental friendly base part number package type standard pack quantity orderable part number IRG7T150HF12J pow ir eco 3+ ? box 80 rg7t150hf12j igbt half - bridge pow ir eco 3+ ? package
irg5k50p5k50pm06e IRG7T150HF12J 2 www.irf.com ? 2014 international rectifier submit datasheet feedback september 2, 2014 switching characteristics of igbt parameter min. typ. max. unit test conditions t d(on) turn - on delay time 480 ns t j = 25c v cc =600v, i c = 150a, r g = 15?, v ge =15v, inductive load 460 t j = 125c t r rise time 190 ns t j = 25c 190 t j = 125c t d(off) turn - off delay time 470 ns t j = 25c 490 t j = 125c t f fall time 180 ns t j = 25c 260 t j = 125c e on turn - on switching loss 11.1 mj t j = 25c 13.4 t j = 125c e off turn - off switching loss 6.7 mj t j = 25c 10.6 t j = 125c q g total gate charge 1100 nc t j = 25c c ies input capacitance 17.3 nf v ce = 25v, v ge = 0v, f 1mhz, t j = 25c c oes output capacitance 1.35 c res reverse transfer capacitance 0.80 rbsoa reverse bias safe operating area trapezoid i c = 300a,v cc = 960v, v p =1200v, r g = 15?, v ge = +15v to 0v, t j = 150c scsoa short circuit safe operating area 10 s v cc = 600v, v ge = 15v, t j = 150c electrical characteristics of igbt at t j = 25 c (unless otherwise specified) parameter min. typ. max. unit test conditions v (br)ces collector - emitter breakdown voltage 1200 v v ge = 0v, i c = 2ma v ge(th) gate threshold voltage 5.0 5.8 6.5 v i c = 7.2ma, v ce = v ge v ce(on) collector to emitter saturation voltage 1.90 2.20 v t j = 25c i c = 150a, v ge = 15v 2.20 v t j = 125c i ces collector to emitter leakage current 2 ma v ge = 0v, v ce = v ces i ges gate to emitter leakage current 400 na v ge = 20v, v ce = 0 r gint internal gate resistance 1.57
irg5k50p5k50pm06e IRG7T150HF12J 3 www.irf.com ? 2014 international rectifier submit datasheet feedback september 2, 2014 absolute maximum ratings of freewheeling diode v rrm repetitive peak reverse voltage 1200 v i f diode continuous forward current, t c = 25c 300 a diode continuous forward current, t c = 80c 150 i fm pulse diode current 300 a ntc - thermistor characteristic values typ. max. unit parameter r 25 t c =25c 5 k? ? r/r t c =100c r 100 =481? 5 % p 25 t c =25c 50 mw b 25/50 r 2 =r 25 exp[b 25/50 (1/t 2 - 1/(298.15k))] 3380 k b 25/80 r 2 =r 25 exp[b 25/80 (1/t 2 - 1/(298.15k))] 3440 k electrical and switching characteristics of freewheeling diode parameter typ. unit test conditions max. v f forward voltage 2.20 v t j = 25c i f = 150a , v ge = 0v 2.70 2.40 t j = 125c i rr peak reverse recovery current 90 a t j = 25c i f 150 a, di/dt=1000a/ s, v rr = 600v, v ge = - 15v 110 t j = 125c q rr reverse recovery charge 13.3 c t j = 25c 15.2 t j = 125c e rec reverse recovery energy 2.0 mj t j = 25c 6.1 t j = 125c
irg5k50p5k50pm06e IRG7T150HF12J 4 www.irf.com ? 2014 international rectifier submit datasheet feedback september 2, 2014 module characteristics min. typ. max. unit parameter v iso isolation voltage (all terminals shorted), f = 50hz, 1minute 2500 v r jc junction - to - case (igbt) 0.147 c/w r jc junction - to - case (diode) 0.290 c/w r cs case - to - sink (conductive grease applied) 0.1 c/w m power terminals screw: m6 3.0 5.0 nm m mounting screw: m6 4.0 6.0 nm g weight 330 g
irg5k50p5k50pm06e IRG7T150HF12J 5 www.irf.com ? 2014 international rectifier submit datasheet feedback september 2, 2014 fig.1 typical igbt saturation characteristics fig.2 typical igbt output characteristics fig.5 typical switching loss vs. collector current fig.6 typical switching loss vs. gate resistance fig. 4 typical capacitance characteristics fig.3 typical freewheeling diode characteristics 0 30 60 90 120 150 180 210 240 270 300 0.0 0.4 0.8 1.2 1.6 2.0 2.4 2.8 3.2 v ge =15v t j =125 c t j =25 c v ce (v) i c (a) 0 30 60 90 120 150 180 210 240 270 300 0.0 0.4 0.8 1.2 1.6 2.0 2.4 2.8 3.2 3.6 t j =125 c v ge =17v v ge =15v v ge =13v v ge =11v v ge =9v v ce (v) i c (a) 0 5 10 15 20 25 0 5 10 15 20 25 30 v ce = 0 v,f=1mhz c ies c oes c (nf) v ce (v) 0 30 60 90 120 150 180 210 240 270 300 0 5 10 15 20 25 v cc =600v,v ge =+/-15v, rg =15 ohm,t j =125 c e off e on e rec e (mj) i c (a) 0 5 10 15 20 25 30 35 40 0 5 10 15 20 25 30 v cc = 600v , v ge = +/-15v , i c = 150a , t j = 125 c e off e on e rec e (mj) rg ( ? ) 0 30 60 90 120 150 180 210 240 270 300 0.0 0.4 0.8 1.2 1.6 2.0 2.4 2.8 3.2 3.6 v ge =0v t j =125 c t j =25 c v f (v) i f (a)
irg5k50p5k50pm06e IRG7T150HF12J 6 www.irf.com ? 2014 international rectifier submit datasheet feedback september 2, 2014 fig. 11 1 7 & 7 h p s h u d w x u h & k d u d f w h u l v w l f v fig.9 typical transient thermal impedance (igbt) fig.10 typical transient thermal impedance (diode) fig.7 typical load current vs. frequency fig.8 reverse bias safe operation area (rbsoa) 0 200 400 600 800 1000 1200 0 60 120 180 240 300 i c (a) v ces (v) module chip 0.001 0.01 0.1 1 2 0.00 0.05 0.10 0.15 0.20 z thjc (k/w) t ( s ) z thjc :igbt 0.001 0.01 0.1 1 2 0.00 0.05 0.10 0.15 0.20 0.25 0.30 0.35 z thjc (k/w) t (s) z thjc :diode 0 30 60 90 120 150 180 210 240 1 10 100 duty cycle:50% t j =125 c t c =80 c r g =15 ohm,v ge =15v frequency (khz) load current (a) square wave: diode as specified v cc i 0 10 20 30 40 50 60 70 80 90 100 110 120 0 2 4 6 8 10 12 14 16 18 20 r ( k ohm ) t c ( c ) rtyp
irg5k50p5k50pm06e IRG7T150HF12J 7 www.irf.com ? 2014 international rectifier submit datasheet feedback september 2, 2014 internal circuit: package outline (unit: mm):
irg5k50p5k50pm06e IRG7T150HF12J 8 www.irf.com ? 2014 international rectifier submit datasheet feedback september 2, 2014 qualification information ? qualification level industrial moisture sensitivity level not applicable rohs compliant yes ? qualification standards can be found at international rectifiers web site: http://www.irf.com/product - info/reliability/ ir world headquarters: 101 north sepulveda blvd, el segundo, california, 90245, usa to contact international rectifier, please visit: http://www.irf.com/whoto - call/
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